Product Summary

The BSM150GT120DN2 is a IGBT Power Module.

Parametrics

Absolute maximum ratings: (1)Collector-emitter voltage: 1200 V; (2)Collector-gate voltage: 1200 V at RGE = 20 kW; (3)Gate-emitter voltage VGE: ± 20 V; (4)DC collector current: 200 A at TC = 25 ℃, 150 A at TC = 80 ℃; (5)Pulsed collector current, tp = 1 ms: 400 A at TC = 25 ℃, 300 A at TC = 80 ℃; (6)Power dissipation per IGBT: 1250 W at TC = 25 ℃; (7)Chip temperature: + 150 ℃; (8)Storage temperature: -55 to + 150 ℃.

Features

Features: (1)Solderable Power module; (2)3-phase full-bridge; (3)Including fast free-wheel diodes; (4)Package with insulated metal base plate.

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BSM150GT120DN2
BSM150GT120DN2

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Data Sheet

0-1: $155.20
1-10: $139.67
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